| PART |
Description |
Maker |
| K7B161825A K7A163600A K7A163601A K7B163625A K7A161 |
512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
|
| CD297BB |
EC Snap-In 105°C Extended Lifetime 7.000h High Ripple Currents(Snap-In)
|
Jianghai Europe GmbH
|
| CD295BC |
EC Snap-In 85∑C Long Lifetime 6.000h High Ripple Currents(Snap-In)
|
JIANGHAI[Jianghai Europe GmbH]
|
| ELXS401VSN151MP30S ELXS401VSN121MP25S ELXS401VSN22 |
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
Long life snap-ins, 105?
|
Nippon Precision Circui...
United Chemi-Con, Inc.
|
| BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
| BUK98150-55 |
TrenchMOS transistor Logic level FET
Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SA48 SA75 SA78 SA9.0 SA8.5 SA110 SA7.0A SA6.0A SA5 |
Transient Voltage Suppressor Diodes 瞬态电压抑制二极管
Enclosed Switches Series LS: Side Plunger; 1NC 1NO DPDT Snap Action, Double Break; 0.5 in - 14NPT conduit; Compact/Non Plug-in
/Case:1206; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitance:270000pF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package
Ceramic Multilayer Capacitor; Capacitance:22000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:100V; Dielectric Characteristic:X7R; Package/Case:0805; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
|
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co., Ltd.
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
|
| MCM01 MCM01-001CC090A-T MCM01-001CC090A-TF MCM01-0 |
SMT Clad RF Capacitors Multilayer High Power, High Temperature Mica and PTFE Capacitors
Mica Film Capacitor; Capacitance:3.3pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:300V CAPACITOR, MICA, 500 V, 0.0000033 uF, SURFACE MOUNT
|
Cornell Dubilier Electr...
Cornell Dubilier Electronics, Inc.
|
| AD644J AD644L AD644K AD644S |
Dual High Speed/ Implanted BiFET Op Amp
Ceramic Multilayer Capacitor; Capacitance:22000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series
10 UF 10% 10V TANT ESR=2R CAP SMT (0805)
|
Analog Devices, Inc.
|
| M48T18-150PC1 M48T18-150MH1 M48T18-150MH1TR M48T18 |
64 Kbit 8Kb x 8 TIMEKEEPER SRAM 64千位kB × 8计时器的SRAM
High Q MLC; Capacitor Type:High Q; Capacitance:1000pF; Capacitance Tolerance: /- 10%; Voltage Rating:1500VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD; Dielectric Characteristic:C0G/NP0; Series:HQCC RoHS Compliant: Yes
64K (8K X 8) TIMEKEEPER SRAM
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
